A 220GHz Low Noise Amplifier Based on 130nm SiGe Process

Based on 130nm SiGe BiCMOS process, this paper presented a 220 GHz low noise amplifier. The amplifier is composed of one stage cascode structure and two stages differential cascode structures. For reducing the chip size, the Marchand baluns with shielded ground are used in the first inter-stage matching network and the output matching network. Other matching networks are composed of capacitors and microstrip lines. The measured result shows a peak gain of 16.2 dB at 216 GHz with a 12 GHz bandwidth (from 212-224 GHz).