Design of Internal-matching High Power Class-F Doherty Power Amplifier

Based on 0.35μm of Nanjing Electronic Devices Institute 0.35μm process platform, design a class-F Doherty power amplifier with package area of working at 3.5GHz.This PA is based on Doherty architecture and controls the second and third harmonics by adding a harmonic control circuit in the output matching circuit to improve efficiency. The power amplifier uses two 9.6mm gate-width GaN HEMTs, with saturated output power greater than 50dBm, efficiency greater than 63% and gain greater than 10dB; The efficiency is also greater than 55% when 6dB backoff. The PA has high output power, efficiency and small area, which fully demonstrates the advantages of GaN HEMT.