A High-Performance 300GHz IQ Mixer Using an Advanced Silicon-Based Chip

In this letter, a high performance 300GHz IQ mixer is developed with detailed package design method, including integrated chip selection, probe design, DC power supply arrangement and gold wire bonding. Based on an advanced silicon-based chip and low-loss package design, a 300GHz IQ mixer module with high performance has been fabricated. At room temperature, the measured results show that the minimum single sideband conversion loss of the mixer is less than 5 dB in the range of 275-297GHz. And the isolation and phase difference between two IF ports are higher than 28dB and ~90 degrees, respectively.