A 1.0W 0.01-22 GHz Wideband Power Amplifier in 0.15 µm GaAs

These paper report a muli-band frequency and high-output power monolithic microwave integrated circuit (MMIC) power amplifier (PA) fabricated in 0.15-μm GaAs pHEMT technology. With distributed topology method, the eight-stage topology PA achieves a positive slope small signal gain of 13-16 dB in range of 0.01 GHz-26 GHz, and the flatness of the small signal gain is less ±1 dB. The saturation output power of 30 dBm and 1-dB compress point (P1_dB) of 29 dBm are achieved in range of 0.01 GHz-22 GHz at static power of 10V@450 mA. Due to small signal gain has large bandwidth, the frequency band of 29 dBm output power is expend 24 GHz when the static power decreased to 10V@375 mA. The value of OIP3 is no less than 35 in range of 0.01-22 GHz. The chip’s area is 2.89×1.55 mm
²
.