Design of Continuous Class F Broadband High Efficiency Power Amplifier Based on GaN HEMT

This work proposes a new harmonic matching network by applying GaN HEMT and designs to implement a continuous class F(CCF) power amplifier. In the frequency band of 1.8~3GHz, the drain efficiency is 58.5~75.9%, the output power is 38.3~42.7dBm, and the gain is 8.3~12.7dB. Starting from the harmonic matching network of class F power amplifier, this work adopts short-step Chebyshev impedance transformers for both input and output, and achieves high efficiency in a wide-band.