An analysis method of small-signal model for packaged GaN HEMT

This paper proposes a method for modeling the small-signal model of GaN HEMT with package. With the combination of step-by-step extraction method and the full electromagnetic simulation of the passive part, this method can avoid the large amount of data optimization efforts in the traditional method. The simulation results of the model obtained by this paper are in good agreement with the commercial model, which validates the proposed modeling method. The GaN HEMT model CGH55015F2 of Wolfspeed, Inc. is selected as the modeling object.