Mission Profile Parameter Extraction for Automotive Body Power Devices with Rapid Control Prototyping Systems

The challenges in power electronics development and testing nowadays are to combine low cost, best performance, optimized design, and the ability to conduct accelerated application relevant stress tests. As the complexity of power semiconductors increases, standard qualification tests will be insufficient, especially during the early phases of technology development a deeper system understanding is very beneficial. Therefore, it is inevitable to conduct application related stress tests. In other words, the device under test (DUT) must be stressed in an application related circuit with loads that emulate the real application as closely as possible (e.g., windshield wiper system, window lift, motors, etc.). Load mission profiles are used for a translation process to create realistic mission profiles for the DUTs. The DUTs are electrical power semiconductor in a half-bridge or B6 configuration, which need a certain switching pattern. Therefore, the challenge is to extract the voltage and current stress the DUTs experience from the applied load. This work delivers a proof of functionality for the idea and states the upcoming opportunities and challenges of such a test concept.