Toward Characterizing 3-D Microwave Field With Microscale Resolution Using Nitrogen-Vacancy Centers in Diamond

Measurement of radio frequency chip microwave field is of great importance for the manufacturing of precision instruments and the development of integrated circuits. In this article, the characterization of chip surface 3-D microwave field distribution was realized with high resolution based on diamond nitrogen-vacancy (NV) centers, and the field-image separation technique was developed to suppress the stray light noise caused by the reflection of the chip. The feasibility of the proposed method was verified by characterizing the planar microwave fields at different powers and the 3-D microwave fields at different frequencies radiated by an antenna chip with a characteristic linewidth of
$100~\mu \text{m}$
. The microwave field of chip radiation was accurately reconstructed with a vertical resolution of
$30~\mu \text{m}$
, and the optimal NV detection sensitivity is 0.8 nT/Hz1/2. The results provide a new approach for antenna radiation detection and on-chip measurement based on quantum detection techniques.