Ion implantation for semiconductor lasers

Ion implantation for the electrical isolation of semiconductor lasers is a commonly applied technique for multi-quantum well (MQW) lasers, as well as for the deep electrical isolation for quantum cascade lasers. In this paper, we present in detail the theoretical simulations of ion implantation processes for deep electrical isolation of AlGaAs/GaAs quantum cascade and for vertical-cavity surface-emitting laser structures. It will be shown the planning steps for establishing the optimal conditions for the proton implantation processes, which led to the choice of the ion energy and type of masking layer. They employed the simulations of distributions of implanted protons and vacancies, formed after the irradiation into the semiconductors as GaAs, AlGaAs etc. and different types of masking layers. The profiles were calculated from the data simulated by the TRansport in Matter code. It will be presented the design process and verification of scheme for AlGaAs/GaAs quantum cascade and vertical-cavity surface-emitting laser structures.