Study of Spacer Layers’ Influence on Current-Voltage Characteristic of Resonant-Tunneling Diode

The influence of spacer layers’ technological errors on resonant-tunneling diodes’ current-voltage characteristic’s peak current’s distribution and an influence of spacer layers’ thickness on resonant-tunneling diodes’ current-voltage characteristics’ direct and reverse branches’ current were studied. The research was conducted using the RTSVAC software package developed by the authors – spacer layers’ thickness’ technological errors’ contribution to the distribution of resonant-tunneling diodes’ peak current has been assessed using a computer statistical experiment. The dispersion of resonant-tunneling diodes’ peak current’s distribution under spacer layers’ thickness’ technological errors’ impact is 18% of the total dispersion under the combined impact of technological errors of all design parameters of resonant-tunneling diodes. It is shown that emitter spacers’ thickness’ variation affects the peak current of resonant-tunneling diodes’ current-voltage characteristics’ direct branch, and varying of collector spacers’ thickness – reverse branch of resonant tunneling-diodes’ current-voltage characteristics.