A 4nm FinFET 0.8V 13ppm/°C Switched Capacitor Based Current Mode Bandgap Reference

Digital SoCs demand accurate on-die sub-lV Bandgap Reference (BGRe1f). In this paper, we developed a switched capacitor based, current mode, variation resilient, 0. 8V bandgap reference for digital SoC application on a 4nm FinFET process node, with 1.5$\mu$s startup time and 0.003m$\mathrm{m}^{2}$ area, the smallest among published current mode BJT based designs. The bandgap architecture is implemented using a single current source with time interleaving and an auto zero error amplifier, with a resultant closed loop offset of$\sim$100$\mu$V, a post trim offset below 0.25% and an average temperature coefficient of 13ppm/°C from 0°C to 120°C.