Research On The β-Ga2O3 Power Diode Of Modulated P-NiOx Feild Terminal Structure

In this paper, a β-Ga
2
O
3
power diode device with p-NiO
x
field termination structure is proposed and optimized by Silvaco TCAD simulation. A basic diode prototype is designed, and a better terminal structure is obtained by changing the length and position of p-NiO
x
, respectively. Then we set the total length of p-NiO
x
as 3 μm with a length of 0.4 μm below the anode to research the effect of p-NiO
x
’s concentration on device’s Baliga’s figure of merit. The result indicates that 2×10
¹⁶
cm
^-3
is the best choice for this diode as the electric field distribution is more scattered and the R
on·sp
has little change. At last, the p-NiO
x
is divided into two parts with different doping concentrations. The result shows that the peak electric field can reduce by 20.7% compared to the single doping concentration of p-NiO
x
, which reflects the enormous potential of modulated p-type doped field terminal structure.