Research On Gradually Variable Doped Channel β-Ga2O3-based Enhancement-Mode MOSFET

β-Ga
2
O
3
material have great potential for power electronics applications due to its good material properties. In this paper, we designed a Ga
2
O
3
-based enhancement mode MOSFET with recessed gate structure by Silvaco TCAD simulation software and solved the problem of mutual constraint between breakdown voltage and on-resistance in MOSFET by means of Gradually Variable (GV) Doped Channel. First, the breakdown voltage of the device is increased by exploring the optimal location of the lightly doped region in the vertical and transverse directions of the channel, and then exploring the location of the heavy doping compensates for the rise in on-resistance due to lightly doped channel. Compared with the Uniformly (Uni) doped channel device (breakdown voltage 1486 V, on-resistance 44.93 mΩ•cm
²
, P-FOM value 49.147 MW/cm
²
), the breakdown voltage of the Gradually Variable doped channel device is 2555 V, the on-resistance 51.90 mΩ•cm
²
, and the P-FOM 125.71 MW/cm
²
.