Turn-Off Characteristic Monitoring of Power Electronic Devices in Three-Phase Inverters Based on ZYNQ

The voltage rise time (t
rv
) of an insulated gate bipolar transistor (IGBT) is an important condition monitoring parameter. There are some problems in traditional t
rv
measurement methods, such as low security, complex measurement, and difficult engineering implementation, and it is also difficult to locate the IGBT to be tested. To overcome the above problems, based on the analysis of the high-frequency circuit model of the inverter-fed machine system. This paper proposes a research scheme to accurately extract t
rv
from a detection circuit current through a parallel capacitive detection circuit of output terminals of an inverter. Combined with the polarity of the output current of the inverter, the accurate positioning of the IGBT under test is realized. Then, taking t
rv
and inverter output currents as characteristic parameters, the IGBT turn-off characteristic monitoring system based on ZYNQ is built. The experimental results show that the proposed scheme is accurate in t
rv
extraction, low cost, simple operation, and easy to implement. The related turn-off characteristic monitoring system has a stable function, fast t
rv
extraction speed, and high accuracy, maximum absolute error of 10.70ns, and maximum relative error of 8.37%.