Research on β-Ga2O3-based heterogeneous PN junction gate E-mode field effect transistor

This work reports two kinds of NiO
X
heterojunction gate Ga
2
O
3
-based E-mode transistors, including the conventional NiO
X
heterojunction gate structure, and the self-aligned NiO
X
heterojunction gate structure. The I–V characteristics and breakdown characteristics of the devices have been studied by a combination of simulation and experiment. It is found that the self-aligned NiO
X
heterojunction gate structure transistor (SHJ-FET) has a higher saturation current and a smaller on-resistance than the conventional NiO
X
heterojunction gate structure transistor (CHJ-FET), which is caused by the NiO
X
is completely coincident with the gate, and the PN heterojunction is completely controlled by the gate. Moreover, the breakdown voltage of the CHJ-FET is slightly increased. The power figure of merit of SHJ-FET is 0.39 GW/cm
²
, which is slightly higher than that of CHJ-FET (0.38 GW/cm
²
).