Thermal Assisted Intermixing at AlScN/Pt Interfaces

Ti/Pt/Al
0.6
Sc
0.4
N/Pt capacitor structure was fabricated. Post-annealing was carried out in nitrogen atmosphere at temperature up to 800 °C to evaluate the thermal stability of the AlScN/Pt interfaces. Material characterization revealed that the AlScN (0002) and the Pt (111) textures remained stable until the annealing temperature did not exceed 500 °C. Annealing at 600 °C and above resulted in notable Pt diffused into the AlScN film, and the bottom Pt reacted with the Si substrate to form PtSi. The thermal assisted intermixing reduced the effective dielectric thickness. Lower dielectric breakdown voltage was thus recorded.