Process Optimization of Sc0.2Al0.8N Bimorph Stack Deposition on 200mm Si Wafer

In this study, we investigated the microstructure and film properties of a bimorph structure with 20% Sc-doped AlN functional layers. The piezoelectric response of both the first and second Sc
0.2
Al
0.8
N films is obtained using DBLI method. Through deposition process optimization, we were able to ensure that the second Sc
0.2
Al
0.8
N layer exhibited comparable d
33,f
and e
31,f
value, crystallinity, and surface roughness as the first Sc
0.2
Al
0.8
N layer.