Improved polarization by interface layer insertion in ferroelectric HfO2-based MFM capacitors

Hafnium zirconium oxide (HZO) is a promising material for ferroelectric non-volatile memory devices as it has low crystalline temperatures and hence is back-end-of-line compatible, is complementary metal–oxide–semiconductor technology compatible (CMOS) as well as offers thickness scalability advantages. Here, we study the insertion of the SiO
2
and Al
2
O
3
interface layers in ferroelectric HZO-based MFM capacitors in terms of ferroelectric behavior. By using such interface layers, an outstanding 2P
r
value of around 60 µC/cm
²
can be achieved.