First Order Reversal Curves for the Evaluation of Thickness Dependent Ferroelectric Switching in Al0.7Sc0.3N Film

In this paper, the First-Order Reversal Curve (FORC) technique is employed to analyze the impact of scandium-doped aluminum nitride (Al
0.7
Sc
0.3
N) ferroelectric film thickness in sub-50 nm regime on coercive field and built-in-bias field distributions in Mo/Al
0.7
Sc
0.3
N/Mo metal-ferroelectric-metal (MFM) capacitors. From the FORC distribution, we find that switching density becomes widened and flattened in thinner Al
0.7
Sc
0.3
N films. The coercive field increases with scaling down the Al
0.7
Sc
0.3
N film thickness. This study will be helpful to understand the effect of Al
0.7
Sc
0.3
N film thickness variation on ferroelectric switching for future non-volatile memory (NVM) applications.