Insights of Nanosheet Channel Thickness on Reliability Degradation of Thin-Film Transistor

Thinning the thickness of the channel to the nanosheet structure effectively improves the control ability of the gate voltage to the channel potential to enhance the performance of the device and become the development direction of the device. Still, the influence on reliability degradation is mostly not considered simultaneously. This work investigates the effect of channel thinning on polycrystalline-silicon thin film transistors using nanosheet channel structures on device performance and reliability and finds that the degradation of device reliability is more severe with the thinning of nanosheet channels. The results present a reliability issue for particular improvement in the future development of nanosheet structures.