Two-Transistor Metal-Ferroelectric-Metal Field- Effect Transistor (2T-MFMFET) for Scalable Embedded Nonvolatile Memory—Part I: Compact Modeling

The two-transistor metal-ferroelectric-metal field-effect transistor (2T-MFMFET), a new back-end-of-line (BEOL) compatible ferroelectric (FE) memory, is recently proposed. 2T-MFMFET is designed to achieve all the critical features of embedded nonvolatile memory (eNVM) at the advanced logic nodes, namely, process compatibility, high retention, excellent endurance, low operating voltage, and superior area scalability. In this study, we detail the operation principles of 2T-MFMFET, including both the memory cell and memory array. Furthermore, a compact model of 2T-MFMFET is developed to evaluate its design space, which shows promise for a low operating voltage of 2 V with a low polarization charge density of less than
$3~\mu \text{C}$
/cm2. Additionally, 2T-MFMFET shows a 136% improvement in area density compared to the static random access memory and negligible read/write disturbance in the array.