Graphene Based Field Effect Transistor with Chemical Free p-Type Channel Doping

This paper reports transport properties for
$\text{Al}_2 \mathbf{O}_3$
and
$\text{SiO}_{2}$
encapsulated graphene bilayer with strain defined sheet carrier density and mobility of
$1.65\cdot 10^{13} \text{cm}^{-2}$
and 1275
$\text{cm}^{2}\mathrm{V}^{-1}\mathrm{s}^{-1}$
for
$\text{Al}_{2}\mathrm{O}_{3}$
and
$0.96 \cdot 10^{13} \text{cm}^{-2}$
and 795
$\text{cm}^2 \text{~V}^{-1} \mathbf{s}^{-1}$
for
$\text{SiO}_{2}$
respectively that were used for the FET fabrication.