Generic Semi-Physical SiC MOSFET Model for the Simulation of Switching Processes

This paper proposes a simple generic semi-physical SiC MOSFET model for the simulation of switching processes. This can be used for the optimization of losses or to test gate drive techniques. The model only needs parameters, which can be obtained from the data sheet. The Common Source elements and dynamic transfer characteristics are the only exceptions and can easily be measured. The proposed model is finally compared to switching measurements and to a SPICE model of the manufacturer to prove the applicability and accuracy.