Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant

In this paper, the 3
^rd
quadrant behavior of a 1.2 kV SiC MOSFET without additional anti-parallel diode is investigated. More specifically, the effect of the gate-source voltage on the reverse conduction is presented, and shows a strong dependency even for a gate voltage varying below the threshold voltage. The static characterization is compared to three other types of MOSFETs that present a stronger reverse current path due to their architectures. A dynamic characterization is also performed to describe the transition between the body-diode conduction and the channel reverse conduction within the 3
^rd
quadrant (a.k.a. synchronous rectification). Both static and dynamic behaviors are compared to the device’s LTspice
^TM
model and highlights the differences between experiment and simulation in 3
^rd
quadrant as the gate voltage below the threshold voltage is not taken into account in this model. Insights towards a more precise modeling for this operating region are discussed at the end of the article.