Dead Time Constraints in Gallium Nitride Devices for Inverter Applications

The paper deals with investigating the dead time constraints for Gallium Nitride (GaN) devices in inverter switching leg applications. The power devices considered are the low-voltage enhancement GaN FETs. The variable current (typical of inverter applications) influencing the dead time impact is analysed through several simulation results and experimental tests. Furthermore, device temperature measurements support the dead time effect. The proposed survey allows for obtaining a procedure for correctly selecting the length of the dead time to avoid cross-conduction and lower the device losses.