Voltage class Comparison of 3.3 kV SiC and 6.5 kV SiC Devices in the Application of HVDC Converters

This work contains a comparison of voltage classes for High Voltage Silicon Carbide devices in the application of Multilevel converters. First a theoretical analysis on device technology parameters is executed to predicate the optimum voltage class of Silicon Carbide devices for highest output power. After this a comparison for static and dynamic device characteristics is performed in a scaled hardware test setup. This data is used for a final converter system benchmark in a loss simulation tool. Furthermore the potential impact of Silicon Carbide super junction devices on the application is discussed based on a previous paper.