Fully Automated Wide Temperature Range Semiconductor Characterization

This paper introduces a fully automated test bench for −75 °C up to 160 °C static and dynamic semiconductor characterization. First measurements performed with a 1.2 kV, 200 A Si-IGBT module and a 1.2 kV, 250 A SiC-MOSFET module show better semiconductor performance at lower temperatures compared to the conventional high temperature operation.