Effect of Dynamic Gate Control Driver on SiC MOSFET Power Module Performance in WLTC

This paper investigates the impact of dynamic gate control on the total losses of a SiC MOSFET power module under Worldwide Harmonized Light Duty Test Cycle (WLTC) Class 3 operating conditions. A time domain-based simulation model is developed for the traction inverter of an electric vehicle (EV) considering temperature-dependent losses and thermal feedback for enhanced accuracy. The study simulates the WLTC using experimental measurement data, allowing examination of various gate driver and sensory configurations, as well as different power module utilisation levels. It is found that due to predominantly partial load conditions in WLTC, the application of a dynamic gate driver can significantly reduce losses - yielding savings between 27 % and 47 % in switching losses and 17 % to 37 % in total inverter losses, depending on the available sensory information, power module utilisation, and gate driver design.