Mitigating Inter-Chip Oscillation of paralleled SiC MOSFETs

In certain parasitic conditions, self-excited oscillation of paralleled SiC MOSFETs can occur. This kind of oscillation is known as inter-chip oscillation and can lead to loss of control, resulting in device breakdown, decreased lifetime, or significantly higher EMI. This paper reveals the mechanism of inter-chip oscillation and presents effective methods for mitigation.