Armchair Graphene Nanoribbon Resonant Tunneling Diode: Influence of numbers of V-cuts as barrier

The arm-chair nanoribbon (AGNR) band gap can be modulated by introducing a geometrical V-cut on the edge. By introducing such cuts in a certain region of pristine AGNR, heterojunction can be created. This heterojunction can be further utilized to create a double barrier quantum well (DBQW) to form a quantized quasi-energy state between barriers. In this paper, we propose a method to construct a resonant tunneling diode by imposing V-cuts as barriers in pristine AGNR, and the effect of the number of cuts in the barrier region is investigated. For numerical calculation, we use the nearest neighbor tight-binding method along with non-equilibrium green function (NEGF) formalism to study transport properties.