Voltage Regulator with Ellipsoidal Transistors

Transistors in CMOS integrated circuit technology and unconventional gate geometry have presented improved drain current gain factor in relation to their conventional counterparts. This work proposes the implementation of a linear series voltage regulator circuit in CMOS technology with ellipsoidal gate geometry and analyze its advantages. In order to make comparisons, two SVR have been designed, one with ellipsoidal gate transistors and other with rectangular gate transistors. For each SVR, a voltage reference circuit, an operational amplifier and a PMOSFET control element have been designed and simulated. Each SVR has been simulated in the temperature range from
$-73{}^{\circ}\mathrm{C}$
to
$227{}^{\circ}\mathrm{C}$
and their characteristic parameters have been compared.