Charge Pump Based Gate Driver Integrated Circuit for SiC MOSFET

Silicon Carbide (SiC) MOSFET has become the mainstream power device for applications having a high voltage, high temperature operating circumstance such as electric vehicle. To exploit the advantages of SiC MOSFET, a welldesigned gate driver is mandatory, whose design challenges have trade-offs among switching speed, noise generation and reliability. Generally, a gate driver is composed of discrete components with occupying a large footprint, while possibly inducing parasitic side-effects and lowering power density. Thus, we demonstrate a gate driver integrated circuit with integrating a self-timing charge pump circuit on chip. Physical design considerations were also raised in this paper to eliminate the occurrence of Latch-up, IR drop, Electromigration, and ESD problems. A charge pump gate driver (CPGD) integrated circuit (IC) is designed, implemented and fabricated using TSMC 0. 1S$\mu$m70V Technology, in which demonstrates a very small die footprint of 3 mm
²
while achieving a significant improvement in switching transient speed over a conventional gate driver design.