Comparison between Experimental and FEM Simulation Results of Differential-Mode Noise in SiC MOSFET based Full-Bridge Power Module

Wide-bandgap (WBG) power semiconductor devices such as SiC MOSFET have superior device characteristics and ability to operate at higher switching frequencies compared to their Si counterparts. But faster switching results in higher EMI noise in high frequency range due to faster turn-on and turn-off, and parasitic oscillations which accompany device switching. This paper presents an FEM based modelling approach for simulation of Differential-Mode (DM) Conducted Emissions Noise at the input side of a SiC MOSFET based Full-Bridge Power Module operating in DC/AC Inverter mode. The simulation model also considers signal attenuation due to LISN, BNC cables and CMDM switch used in experimental measurement of DM Noise. The experimental and simulation results are compared from 300kHz to 60MHz frequency-range for DC/AC Inverter with Inductive Load operating at 3.2 kVA.