An Ultralow Forward Voltage SiC Trenched Junction-Pinched Barrier Rectifier (TBR)

SiC diodes are commonly used in high voltage applications, but their high forward voltage drop compared to silicon diodes results in increased conduction losses. Researchers have proposed the use of junction-pinched barrier rectifiers (PBRs) to overcome this issue. The PBRs allow the designer to adjust the barrier and tune the device characteristics based on the trade-off of $V_{F}$ and reverse leakage current. However, conventional PBRs have challenges in process window and yield due to their sensitivity to p-pinch pitch and doping concentration. To improve feasibility, a trenched junction-pinched barrier rectifier (TBR) has been proposed. The TBRs have trenches to optimize the electric field distribution, allowing for suitable pitch and thus lower $V_{F}$, while maintaining low $I_{R}$. Simulation studies show that the TBRs have improved performance compared to conventional PBRs. The TBRs have the potential to improve the efficiency and performance of high voltage applications.