Analysis and Comparison of LLC Resonance Circuits for Wide Band Gap Semiconductor Component

In this paper, developed a 200W half-bridge LLC resonant converter, with gallium nitride high electron mobility transistor (GaN FET). Compared with a silicon MOSFET, a gallium nitride transistor (GaN FET) has a smaller on-resistance and reduces This reduces the conduction loss. This article presents a highly efficient LLC resonant converter using a 600V GaNFET. Based on the transfer function circuit of the converter, the design process of the converter is discussed. This paper analyzes four different designs of LLC half-bridge resonant converters. With fixed transformer inductance, resonant frequency, and resonant inductance, the types of switching elements and circuit design are analyzed, and then their impact on conduction loss and conversion efficiency are analyzed. The conversion efficiency of the bridge resonant converter will be effectively improved.