ESD in CMOS Integrated Circuit

The electronic industry has developed rapidly in decades. In the process, transistors play an important role. Among them, Complementary Metal Oxide Semiconductor (CMOS) has a good performance. However, the smaller size makes the oxide layer easy to be broken. This paper mainly introduces the working principle of CMOS. Then the problems of ESD are derived. Methods of solving the Electrostatic Discharge (ESD) problem are divided into three parts, on-chip, off-chip, and SCR. In each category, several specific examples are provided. Some methods are analyzed in detail. The three methods have their own advantages and disadvantages. They should be chosen depending on the situation. Different methods can be combined to increase the performance. To decrease the damage, ESD can also be avoided by using ways such as antistatic wrist strap. The results can help the industry decrease the production of ESD and injury to CMOS IC. Electronic devices can work stably and have a longer life span if the problem of ESD can be solved properly.