Characterization and Simulation of Terrestrial Neutron-Induced Destructive Single-Event Effects in Gallium Nitride (GaN) Power Devices

Terrestrial neutron-induced single-event gate rupture (SEGR) in a commercial depletion mode gallium nitride (GaN) power high-electron-mobility transistor (HEMT) has been reported in our recent paper. To further understand the neutron-induced failure mechanisms, nuclear event and electronic simulations were performed to model the effect of terrestrial neutron secondary-ion-induced gate dielectric breakdown. Transient device simulations determined ion-induced peak transient electric field and duration for a variety of ion linear energy transfers (LETs), ion injection locations, and applied drain voltages. Results demonstrate that the peak transient electric fields exceed the breakdown strength of the gate dielectric leading to dielectric defect generation and breakdown.