Analog $dv/dt$ and $di/dt$ Controlled Gate Driver With Self-Triggered Hold-at-Zero Algorithm for High-Power IGBTs

Since each insulated-gate bipolar transistor (IGBT) module has a unique characteristic switching form, the turn-
on
and turn-
off
periods can be adjusted to suit certain usages. Gate resistors are employed for the conventional gate drivers (CGDs) to modify the turn-
on
and turn-
off
periods, which alter switching losses that significantly increase total losses. Both the collector-current rate of change (
$di_{C}/dt$
) and the collector–emitter rate of change (
$dv_{\text{CE}}/dt$
) influence the operating parameters in high-power converters. In this article, active
$dv_{\text{CE}}/dt$
and
$di_{C}/dt$
controlled IGBT gate driver with high-speed analog feedback circuits is given. Contrary to CGDs, the proposed active gate drive allows constant
$di_{C}/dt$
while decreasing
$dv_{\text{CE}}/dt$
to increase the efficiency of the power conversion system. Without affecting the electromagnetic interference, IGBT voltage, and current stresses, which are related to
$di_{C}/dt$
. Also, unlike other gate drivers, the effect of
$di_{C}/dt$
to
$dv_{\text{CE}}/dt$
at turn-
on
is eliminated with a completely analog designed self-triggered hold-at-zero circuit without the need for any digital unit. Hardware prototype is created to experimentally test the proposed active gate drive concept. A novel package next high power density dual family MBM450FS33F Hitachi dual IGBT with 3300 V 450 A ratings is used for the tests.