Synergistic Effects Simulation of MOSFET by Control Volume Finite Element Method

The synergistic effects of the electromagnetic pluse (EMP) and analog transient radiation effects in electronics (ATREE) are numerically investigated by our In-house Solver. The drift-diffusion model is discretized by control volume finite element method. Numerical results of metal oxide semiconductor field-effect transistor (MOSFET) indicate that the current distur-bance by EMP is noticeable in the time range about 10-100ns. Moreover, the amplitudes of drain current increases obviously with the increasing transient dose rate.