Thermal-Fluid Co-Simulation and Modelling of IGBT with Thermal Resistance Network

Due to the miniaturization of power semiconductor device and the increasing power density, temperature prediction has played an important part in module reliability. In this paper, the model of an insulated gate bipolar transistor (IGBT) module is firstly established, and junction temperature is extracted from the numerical simulation. Furthermore, the corresponding thermal resistance network is constructed by temperature curve fitting. Under various circumstances, we achieve fine agreement with finite element method (FEM).