An IGBT Desaturation Protection Technique With Leading Edge Blanking

IGBTis a prevalent power device that has been widely employed in the industrial domain. During operation, IGBT often encounters faults such as short circuits, which would cause damage to the IGBT if it remains in a short-circuit state for an extended period, thus adversely affecting the operation of industrial systems. The paper proposes an IGBT desaturation protection technique with leading edge blanking, which monitors the occurrence of short circuits in IGBT and provides timely protection. The leading edge blanking technique ensures that the IGBT has enough time to enter the saturation region during conduction, thereby minimizing the possibility of erroneous detection. The proposed desaturation protection technique is designed based on SMIC 0.18um BCD process. According to simulation results, the leading edge blanking time is 310 ns, the desaturation detection charging current is 523 uA, and the desaturation reference voltage is 8.95 V.