Transient Electro-thermal and Bandgap Narrowing Analysis of the bipolar transistor

Given the bandgap narrowing (BGN) effect caused by heavy doping of the bipolar transistor and the self-heating effect (SHE) in the practical work environment, a transient electro-thermal and bandgap narrowing model is proposed in this paper, which is based on the Slotboom model and the modification of the drift-diffusion equation based on semiconductor equations and the heat conduction equation. The transient characteristics of the bipolar transistor in amplification mode are simulated using the differential method, and the results show that the terminal current of the bipolar transistor decreases after considering the SHE and the BGN effect. The model developed and the results obtained in this work can provide some reference significance for the optimization of the amplification characteristics of the bipolar transistor.