A low phase noise FBAR voltage controlled oscillator design

Using the designed high-Q thin-film acoustic wave resonator, a voltage-controlled oscillator with low phase noise and low power tunable frequency was designed, combined with tsmcN65 CMOS process. Firstly, the MBVD equivalent circuit model is applied to fit the designed high-Q FBAR resonator to obtain six circuit parameters. Then the circuit model is imported into Candence, and the FBAR voltage-controlled oscillator is designed based on the negative resistance principle. The resulting voltage-controlled oscillator has a center frequency of 2.742GHz, tuning bandwidth of 20MHz, phase noise of -144dBc/Hz@1MHz, power consumption of only 0.86mW, and FOM value of 213.4.