Electro-Thermal Simulation of GaN HEMT by Finite Element Method

High power dissipation in the Gallium nitride high electron mobility transistor (GaN HEMT) leads to severe self heating effects, resulting in performance degradation. This study presents a comprehensive numerical electro-thermal simulation method of GaN HEMT by self-consistently solving the drift diffusion transport equations and thermal conduction equation with various temperature-dependent parameters, including band gap and electron mobility. According to simulation results, the self-heating effects significantly degrade device performance.