Transient Analysis of AlGaN/GaN Heterostructure Based on Spectral-Element Time-Domain Method

To describe the electrical characteristics of AlGaN/GaN HEMTs, this paper adopts the spectral-element time-domain (SETD) method to simulate the AlGaN/GaN HEMT devices. The boundary condition of heterojunction is introduced into the drift diffusion model to obtain the volt-ampere characteristic of AlGaN/GaN HEMT. The numerical results are compared with the commercial software COMSOL simulation results to verify the accuracy of the proposed algorithm.