Total Ionizing Dose Effects of A 180 nm Bulk CMOS

CMOS devices are widely used in modern integrated circuits. However, like any semiconductor device, CMOS devices are susceptible to total ionizing dose (TID) effects when exposed to ionizing radiation environments. In this work, a TCAD model of a 180 nm bulk COMS is developed to investigate the impact of TID effects. Simulated results show that the TID effects can cause a negative shift in the voltage characteristics curve and an increase in leakage current of CMOS devices.