Response of NMOS to Combined Ionization and EMP Environments

Electronic systems in space or nuclear devices are exposed to both ionizing radiation and electromagnetic radiation environments. Experimental results have indicated that the semiconductor devices may suffer severe damage in the combined environment of ionizing radiation and electromagnetic radiation. In this work, a total ionizing dose (TID) effects and electromagnetic pulses (EMP) combined effect model of NMOS device is established. Simulation results show that the NMOS will exhibit more severe leakage current increase and sub-threshold characteristics degradation in the combined environments.