Effects of N2 Pretreatment on Performance and Stabilities of Power p-GaN HEMTs

In this work, we study the effect of N
2
surface treatment on the performance and reliability of p-GaN gate high-electron-mobility-transistor (HEMT). The results indicate that N
2
plasma pretreatment is effective in achieving stable threshold voltage, reducing the off-state leakage current and improving the HTRB stability in power p-GaN HEMTs.