Influence of RF Power on Crystal Formation in Ionized Metal Plasma Ta and TaN Deposition

In this study, the authors propose studying the influence of RF power on crystal formation in ionized metal plasma Ta and TaN processes by X-Ray Diffraction. Additionally, Auger electron spectroscopy and nano-indentation are employed to investigate any interdependence on the film crystallinity of the elemental composition profile and hardness and modulus, respectively. Both single layer and TaN/Ta bilayer films are evaluated.