Dynamic Hot Carrier Degradation Behavior of Polycrystalline Silicon Thin-Film Transistors under Gate Voltage Pulse Stress with Fast Transition Time

Dynamic hot carrier (HC) degradation behavior of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) under gate voltage pulse stress with fast transition time is systematically investigated for the first time. The dynamic HC degradation is dependent on pulse rising time but independent of pulse falling time. Extremely severe HC degeneration is observed under gate voltage pulse stress with a fast transition time smaller than 20 ns. Combined with TCAD simulations, the dynamic HC degradation mechanism is discussed. The test results would be helpful for the reliability designing of the poly-Si TFTs in high-frequency applications.